| Vgs (th) (Max) @ Id: | 5.5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverantörs Device Package: | TO-262 |
| Serier: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 56 mOhm @ 20A, 10V |
| Effektdissipation (Max): | 3.8W (Ta), 170W (Tc) |
| Förpackning: | Tape & Reel (TR) |
| Förpackning / fall: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstyp: | Through Hole |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2020pF @ 25V |
| Gate Laddning (Qg) (Max) @ Vgs: | 90nC @ 10V |
| FET-typ: | N-Channel |
| FET-funktionen: | - |
| Avlopp till källspänning (Vdss): | 150V |
| Ström - Kontinuerlig avlopp (Id) @ 25 ° C: | 33A (Tc) |
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